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Improved carrier confinement and distribution in InGaN light-emitting diodes with three-layer staggered QWs
Improved carrier confinement and distribution in InGaN light-emitting diodes with three-layer staggered QWs
- Source :
- AIP Advances, Vol 11, Iss 7, Pp 075027-075027-6 (2021)
- Publication Year :
- 2021
- Publisher :
- AIP Publishing, 2021.
-
Abstract
- Compared with conventional InGaN Quantum Wells (QWs), staggered InGaN QWs offer improved optical and electronic properties. This work studied the carrier concentration, band structure, overlap of hole and electron wave functions, and polarization field of three-layer staggered QWs in the blue spectral region and analyzed them in detail theoretically to explore the source and the dominant mechanism for improvement. Although theoretical studies indicate that the polarization field in QWs of staggered InGaN QWs is larger, the carrier confinement effect is stronger, and the carrier distribution is more uniform. Therefore, three-layer staggered QWs can improve overlapping of the hole and electron wave functions and then enhance the recombination rate so as to increase the optical output power and electroluminescence intensity. Moreover, the performance of the staggered structure C with the lowest indium content at the center of the well is better than that of the step-staggered structure B.
- Subjects :
- Materials science
Condensed Matter::Other
business.industry
Physics
QC1-999
High Energy Physics::Lattice
General Physics and Astronomy
chemistry.chemical_element
Electron
Electroluminescence
Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Polarization (waves)
law.invention
chemistry
law
Optoelectronics
business
Electronic band structure
Wave function
Quantum well
Indium
Light-emitting diode
Subjects
Details
- ISSN :
- 21583226
- Volume :
- 11
- Database :
- OpenAIRE
- Journal :
- AIP Advances
- Accession number :
- edsair.doi.dedup.....a852b50a478b2f94dc803541fbc659a5
- Full Text :
- https://doi.org/10.1063/5.0054062