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Observation and origin of the Δ manifold in Si:P δ layers
- Source :
- Holt, A J, Mahatha, S K, Stan, R M, Strand, F S, Nyborg, T, Curcio, D, Schenk, A K, Cooil, S P, Bianchi, M, Wells, J W, Hofmann, P & Miwa, J A 2020, ' Observation and origin of the Δ manifold in Si:P δ layers ', Physical Review B, vol. 101, no. 12, 121402 . https://doi.org/10.1103/PhysRevB.101.121402
- Publication Year :
- 2020
- Publisher :
- American Physical Society (APS), 2020.
-
Abstract
- By creating a sharp and dense dopant profile of phosphorus atoms buried within a silicon host, a two-dimensional electron gas is formed within the dopant region. Quantum confinement effects induced by reducing the thickness of the dopant layer, from $4.0\phantom{\rule{0.28em}{0ex}}\mathrm{nm}$ to the single-layer limit, are explored using angle-resolved photoemission spectroscopy. The location of theoretically predicted, but experimentally hitherto unobserved, quantum well states known as the $\mathrm{\ensuremath{\Delta}}$ manifold is revealed. Moreover, the number of carriers hosted within the $\mathrm{\ensuremath{\Delta}}$ manifold is shown to be strongly affected by the confinement potential, opening the possibility to select carrier characteristics by tuning the dopant-layer thickness.
- Subjects :
- Physics
Condensed matter physics
Silicon
Dopant
Photoemission spectroscopy
chemistry.chemical_element
Quantum well states
02 engineering and technology
021001 nanoscience & nanotechnology
01 natural sciences
law.invention
Condensed Matter::Materials Science
chemistry
law
Quantum dot
0103 physical sciences
010306 general physics
0210 nano-technology
Fermi gas
Manifold (fluid mechanics)
Subjects
Details
- ISSN :
- 24699969 and 24699950
- Volume :
- 101
- Database :
- OpenAIRE
- Journal :
- Physical Review B
- Accession number :
- edsair.doi.dedup.....a8c33ec60c579466270c1eb335bf5810