Observation and origin of the Δ manifold in Si:P δ layers

By creating a sharp and dense dopant profile of phosphorus atoms buried within a silicon host, a two-dimensional electron gas is formed within the dopant region. Quantum confinement effects induced by reducing the thickness of the dopant layer, from $4.0\phantom{\rule{0.28em}{0ex}}\mathrm{nm}$ to the single-layer limit, are explored using angle-resolved photoemission spectroscopy. The location of theoretically predicted, but experimentally hitherto unobserved, quantum well states known as the $\mathrm{\ensuremath{\Delta}}$ manifold is revealed. Moreover, the number of carriers hosted within the $\mathrm{\ensuremath{\Delta}}$ manifold is shown to be strongly affected by the confinement potential, opening the possibility to select carrier characteristics by tuning the dopant-layer thickness.