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Low-temperature photoluminescence study of thin epitaxial GaAs films on Ge substrates
- Source :
- Journal of Applied Physics. 99:093514
- Publication Year :
- 2006
- Publisher :
- AIP Publishing, 2006.
-
Abstract
- Thin epitaxial GaAs films, with thickness varying from 140 to 1000 nm and different Si doping levels, were grown at 650C by organometallic vapor phase epitaxy (OMVPE) on Ge substrates and extensively analyzed by low-temperature photoluminescence (PL) spectroscopy.<br />19 pages, 14 figures
- Subjects :
- Condensed Matter - Materials Science
Materials science
Photoluminescence
business.industry
Doping
Materials Science (cond-mat.mtrl-sci)
FOS: Physical sciences
General Physics and Astronomy
chemistry.chemical_element
Germanium
Substrate (electronics)
Chemical vapor deposition
Epitaxy
chemistry
Optoelectronics
Metalorganic vapour phase epitaxy
business
Molecular beam epitaxy
Subjects
Details
- ISSN :
- 10897550 and 00218979
- Volume :
- 99
- Database :
- OpenAIRE
- Journal :
- Journal of Applied Physics
- Accession number :
- edsair.doi.dedup.....a8e78a8d3eb0a28404f8dc15d8c2de89
- Full Text :
- https://doi.org/10.1063/1.2194111