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The thermal stability of epitaxial GeSn layers
- Source :
- APL materials 6(7), 076108 (2018). doi:10.1063/1.5036728, APL Materials, Vol 6, Iss 7, Pp 076108-076108-10 (2018)
- Publication Year :
- 2018
- Publisher :
- AIP Publ., 2018.
-
Abstract
- We report on the direct observation of lattice relaxation and Sn segregation of GeSn/Ge/Si heterostructures under annealing. We investigated strained and partially relaxed epi-layers with Sn content in the 5 at. %-12 at. % range. In relaxed samples, we observe a further strain relaxation followed by a sudden Sn segregation, resulting in the separation of a β-Sn phase. In pseudomorphic samples, a slower segregation process progressively leads to the accumulation of Sn at the surface only. The different behaviors are explained by the role of dislocations in the Sn diffusion process. The positive impact of annealing on optical emission is also discussed.
- Subjects :
- Materials science
Annealing (metallurgy)
Lattice relaxation
lcsh:Biotechnology
02 engineering and technology
Epitaxy
01 natural sciences
Engineering (all)
lcsh:TP248.13-248.65
Lattice (order)
Segregation process
0103 physical sciences
Diffusion process
General Materials Science
Thermal stability
Optical emissions
Sn contents
010302 applied physics
Condensed matter physics
Direct observations
General Engineering
Direct observation
Heterojunction
021001 nanoscience & nanotechnology
lcsh:QC1-999
Positive impacts
Materials Science (all)
Optical emission spectroscopy
ddc:620
0210 nano-technology
lcsh:Physics
Subjects
Details
- Language :
- English
- Database :
- OpenAIRE
- Journal :
- APL materials 6(7), 076108 (2018). doi:10.1063/1.5036728, APL Materials, Vol 6, Iss 7, Pp 076108-076108-10 (2018)
- Accession number :
- edsair.doi.dedup.....aacfbe94a4ff3c2d9a93379ce39a757b
- Full Text :
- https://doi.org/10.1063/1.5036728