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The thermal stability of epitaxial GeSn layers

Authors :
Dan Buca
Y. Hou
N. von den Driesch
Daniela Stange
Peter Zaumseil
Michele Virgilio
M. A. Schubert
Denis Rainko
Giovanni Capellini
Zaumseil, P.
Hou, Y.
Schubert, M. A.
von den Driesch, N.
Stange, D.
Rainko, D.
Virgilio, M.
Buca, D.
Capellini, G.
Source :
APL materials 6(7), 076108 (2018). doi:10.1063/1.5036728, APL Materials, Vol 6, Iss 7, Pp 076108-076108-10 (2018)
Publication Year :
2018
Publisher :
AIP Publ., 2018.

Abstract

We report on the direct observation of lattice relaxation and Sn segregation of GeSn/Ge/Si heterostructures under annealing. We investigated strained and partially relaxed epi-layers with Sn content in the 5 at. %-12 at. % range. In relaxed samples, we observe a further strain relaxation followed by a sudden Sn segregation, resulting in the separation of a β-Sn phase. In pseudomorphic samples, a slower segregation process progressively leads to the accumulation of Sn at the surface only. The different behaviors are explained by the role of dislocations in the Sn diffusion process. The positive impact of annealing on optical emission is also discussed.

Details

Language :
English
Database :
OpenAIRE
Journal :
APL materials 6(7), 076108 (2018). doi:10.1063/1.5036728, APL Materials, Vol 6, Iss 7, Pp 076108-076108-10 (2018)
Accession number :
edsair.doi.dedup.....aacfbe94a4ff3c2d9a93379ce39a757b
Full Text :
https://doi.org/10.1063/1.5036728