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In situ measurements of temperature-dependent strain relaxation of Ge/Si(111)
- Source :
- Scopus-Elsevier
- Publication Year :
- 1997
- Publisher :
- American Vacuum Society, 1997.
-
Abstract
- We have measured strain relaxation and clustering in Ge films grown by molecular beam epitaxy on Si(111) at substrate temperatures between 450 and 700 °C in real time with reflection high energy electron diffraction (RHEED). At 450 °C, we observe an oscillation of the surface lattice constant for the first 3.5 bilayers [(BLs) thicknesses were calibrated by Rutherford backscattering spectrometry], followed by a sharp two-dimensional–three-dimensional (2D–3D) growth mode transition, when transmission diffraction features appear in RHEED. The surface lattice constant then begins to relax at an initial rate of about 0.5%/BL. The mechanisms of island growth and strain relaxation change with growth temperature. At 500 °C, the surface lattice constant begins to relax after only 1 BL, and at 550 °C relaxation begins immediately. At both temperatures, however, 3D spots do not appear until after 3.5 BL. The initial rate of strain relaxation decreases with increasing temperature until, at 700 °C (when 3D spots never...
- Subjects :
- Diffraction
Materials science
Reflection high-energy electron diffraction
Condensed matter physics
Surfaces and Interfaces
Island growth
Condensed Matter Physics
Rutherford backscattering spectrometry
Surfaces, Coatings and Films
Crystallography
Lattice constant
Electron diffraction
Stress relaxation
Molecular beam epitaxy
Subjects
Details
- ISSN :
- 15208559 and 07342101
- Volume :
- 15
- Database :
- OpenAIRE
- Journal :
- Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
- Accession number :
- edsair.doi.dedup.....aca17dc6192cbaf914656eee84250af9