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Nanostructuration of Cr/Si layers induced by ion beam mixing
- Source :
- Symposium HH – Advances in Materials for Nuclear Energy, Symposium HH – Advances in Materials for Nuclear Energy, Nov 2012, Boston, France. pp.61-68, ⟨10.1557/opl.2013.196⟩
- Publication Year :
- 2013
- Publisher :
- Springer Science and Business Media LLC, 2013.
-
Abstract
- This work clearly demonstrates that the X Ray Reflectometry technique (XRR), extensively used to assess the quality of microelectronic devices can be a useful tool to study the first stages of ion beam mixing. This technique allows measuring the evolution of the Si concentration profile in irradiated Cr/Si layers. From the analysis of the XRR profiles, it clearly appears that the Si profile cannot be described by a simple error function.
- Subjects :
- Materials science
Ion beam analysis
Ion beam mixing
business.industry
Analytical chemistry
02 engineering and technology
021001 nanoscience & nanotechnology
Microstructure
01 natural sciences
Focused ion beam
X-ray reflectivity
0103 physical sciences
[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]
Microelectronics
Irradiation
010306 general physics
0210 nano-technology
Reflectometry
business
Subjects
Details
- ISSN :
- 19464274 and 02729172
- Volume :
- 1514
- Database :
- OpenAIRE
- Journal :
- MRS Proceedings
- Accession number :
- edsair.doi.dedup.....ad21b9a1afad54f04b288d691270e51a
- Full Text :
- https://doi.org/10.1557/opl.2013.196