Electronic Conduction in Annealed Sulfur-Doped a-Si:H Films

In present work, the effect of annealing on dark and photo conductivity as well as the various causes of conduction mechanics in S doped amorphous hydrogenated silicon films (a-Si:H) is discussed. The variation of the dark conductivity as a function of temperature has been carried out on unannealed and annealed (annealed at an optimized temperature of 300 °C) thin film samples and the activation energy of dark conductivity of respective samples was also calculated at different temperatures. The Study concludes that at high temperatures, an activated type mechanism is responsible for conduction in the a-Si:H films.