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Characterization of oxide films on 4H-SiC epitaxial (0001¯) faces by high-energy-resolution photoemission spectroscopy: Comparison between wet and dry oxidation

Authors :
Hiroyuki Yaguchi
Sadafumi Yoshida
Yasutaka Takata
Takeo Hattori
Keisuke Kobayashi
Hiroshi Nohira
Yasuto Hijikata
Source :
Journal of Applied Physics. 100:053710
Publication Year :
2006
Publisher :
AIP Publishing, 2006.

Abstract

Wet and dry oxide films-4H-SiC epitaxial (000 (1) over bar) C-face interfaces have been characterized by capacitance-voltage (C-V) measurements and soft x-ray excited photoemission spectroscopy (SX-PES) and hard x-ray excited photoemission spectroscopy (HX-PES) using synchrotron radiation. The interface state density for wet oxidation is much smaller than that for dry oxidation at any energy level. In the PES measurements, intermediate oxidation states such as Si1+ and Si3+ were observed. In addition, the areal densities of these states were found to be in a good correspondence with those of the interface states. The reasons for the good electrical characteristics of metal-oxide-semiconductor devices fabricated by wet oxidation are discussed in terms of the depth profiles of oxide films derived from the SX-PES and HX-PES results. (c) 2006 American Institute of Physics.<br />copyright(c)2006 American Institute of Physics.

Details

ISSN :
10897550 and 00218979
Volume :
100
Database :
OpenAIRE
Journal :
Journal of Applied Physics
Accession number :
edsair.doi.dedup.....b07c99848b41029b5fc9790c1c138260
Full Text :
https://doi.org/10.1063/1.2345471