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A realistic topological p–n junction at the Bi2Se3 (0001) surface based on planar twin boundary defects
- Source :
- Digital.CSIC. Repositorio Institucional del CSIC, instname
- Publication Year :
- 2017
- Publisher :
- Springer Science and Business Media LLC, 2017.
-
Abstract
- We propose a realistic topological p−n junction (TPNJ) by matching two BiSe (0001) slabs with opposite arrangements of planar twin boundary defects. The atomistic modeling of such a device leads to dislocation defects in the hexagonal lattice in several quintuple layers. Nevertheless, total energy calculations reveal that the interface relaxes, yielding a smooth geometrical transition that preserves the nearest-neighbors fcc-type geometry throughout these defect layers. The electronic, magnetic, and transport properties of the junction have then been calculated at the ab initio level under open boundary conditions, i.e., employing a thin-film geometry that is infinite along the electron transport direction. Indeed, a p−n junction is obtained with a built-in potential as large as 350 meV. The calculations further reveal the spin texture across the interface with unprecedented detail. As the main result, we obtain non-negligible transmission probabilities around the Γ point, which involve an electron spin-flip process while crossing the interface.<br />This work has been supported by the Spanish Ministry of Economy and Competitiveness through Grant No. MAT2015-66888-C3-1R, MINECO/FEDER.
- Subjects :
- Materials science
02 engineering and technology
Topology
01 natural sciences
p–n junctions
0103 physical sciences
Electronic devices
Topological insulators
General Materials Science
Hexagonal lattice
Boundary value problem
Electrical and Electronic Engineering
010306 general physics
Condensed matter physics
Spintronics
Texture (cosmology)
021001 nanoscience & nanotechnology
Condensed Matter Physics
Atomic and Molecular Physics, and Optics
Twin boundaries
Topological insulator
Dislocation
0210 nano-technology
p–n junction
Crystal twinning
Subjects
Details
- ISSN :
- 19980000 and 19980124
- Volume :
- 10
- Database :
- OpenAIRE
- Journal :
- Nano Research
- Accession number :
- edsair.doi.dedup.....b095713f6c67fdc4ee3e44eefdd3eb7b