Evaluation of the surface bonding energy of an InP membrane bonded oxide-free to Si using instrumented nanoindentation

Authors :: A. Itawi
Eric Le Bourhis
David Troadec
Isabelle Sagnes
Konstantinos Pantzas
Gilles Patriarche
Anne Talneau
Grégoire Beaudoin
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN)
Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)
Source :: Applied Physics Letters, Applied Physics Letters, American Institute of Physics, 2013, 103, pp.081901-1-4. ⟨10.1063/1.4817675⟩, Applied Physics Letters, 2013, 103, pp.081901-1-4. ⟨10.1063/1.4817675⟩
Publication Year :: 2013
Publisher :: AIP Publishing, 2013.
Abstract: Instrumented nanoindentation is used in conjunction with scanning transmission electron microscopy to evaluate the mechanical resistance at the bonding interface of a 450 nm thick InP membrane bonded oxide-free to Si. Indentation using a Berkovich tip is shown to cause the planes in InP to rotate by as much as 16°. The shear stress resulting from this rotation causes the InP membrane to buckle, forming a debonded blister around the indented zone. The geometry of this blister is used to compute the surface bond energy of InP bonded oxide-free to Si. An average surface bonding energy of 585 mJ m−2 is reported.

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