An 'all-p-type' termination structure for silicon microstrip detectors

A novel termination structure for silicon microstrip detectors is proposed, featuring all-p-type multiguards and scribe-line implant, as well as inward metal field-plates providing almost complete coverage of the passivation-oxide external surface. The structure is intended for detector long-term stability improvement and fabrication-process simplification. Proper design of the multiguard layout enables a very stable behavior at relatively high bias voltages to be achieved.