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Growth of Si nanowires on micropillars for the study of their dopant distribution by atom probe tomography

Authors :
D. Stievenard
Bruno Grandidier
J.P. Nys
Y. Coffinier
Rabah Boukherroub
Emmanuel Cadel
Philippe Pareige
Rodrigue Lardé
Tao Xu
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN)
Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)
Source :
Journal of Vacuum Science and Technology, Journal of Vacuum Science and Technology, 2008, 26, pp.1960-1963. ⟨10.1116/1.3021371⟩, Journal of Vacuum Science and Technology B, Journal of Vacuum Science and Technology B, 2008, 26, pp.1960-1963. ⟨10.1116/1.3021371⟩
Publication Year :
2008
Publisher :
HAL CCSD, 2008.

Abstract

This article reports on the growth of Au islands on the Si(111) surface as a function of the Au evaporation rate and the temperature of the surface in ultrahigh vacuum. By controlling the density of the Au islands and their size, it is possible to subsequently grow single vertically oriented Si nanowires on top of (111)-oriented silicon micropillar and analyze their chemical composition at the atomic scale with the femtosecond laser assisted tomographic atom probe. Three-dimensional images of the atom distribution in the nanowire, in particular, the distribution of boron impurities, are obtained and compared to the intended impurity concentration.

Details

Language :
English
ISSN :
00225355
Database :
OpenAIRE
Journal :
Journal of Vacuum Science and Technology, Journal of Vacuum Science and Technology, 2008, 26, pp.1960-1963. ⟨10.1116/1.3021371⟩, Journal of Vacuum Science and Technology B, Journal of Vacuum Science and Technology B, 2008, 26, pp.1960-1963. ⟨10.1116/1.3021371⟩
Accession number :
edsair.doi.dedup.....b235163ac00d095daf8aa944d267b7c2
Full Text :
https://doi.org/10.1116/1.3021371⟩