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Growth of Si nanowires on micropillars for the study of their dopant distribution by atom probe tomography
- Source :
- Journal of Vacuum Science and Technology, Journal of Vacuum Science and Technology, 2008, 26, pp.1960-1963. ⟨10.1116/1.3021371⟩, Journal of Vacuum Science and Technology B, Journal of Vacuum Science and Technology B, 2008, 26, pp.1960-1963. ⟨10.1116/1.3021371⟩
- Publication Year :
- 2008
- Publisher :
- HAL CCSD, 2008.
-
Abstract
- This article reports on the growth of Au islands on the Si(111) surface as a function of the Au evaporation rate and the temperature of the surface in ultrahigh vacuum. By controlling the density of the Au islands and their size, it is possible to subsequently grow single vertically oriented Si nanowires on top of (111)-oriented silicon micropillar and analyze their chemical composition at the atomic scale with the femtosecond laser assisted tomographic atom probe. Three-dimensional images of the atom distribution in the nanowire, in particular, the distribution of boron impurities, are obtained and compared to the intended impurity concentration.
- Subjects :
- Materials science
Silicon
Nanowire
Physics::Optics
chemistry.chemical_element
Nanotechnology
02 engineering and technology
Atom probe
01 natural sciences
Atomic units
law.invention
Impurity
law
0103 physical sciences
Physics::Atomic and Molecular Clusters
Electrical and Electronic Engineering
Boron
010302 applied physics
Dopant
business.industry
021001 nanoscience & nanotechnology
Condensed Matter Physics
chemistry
Femtosecond
Optoelectronics
0210 nano-technology
business
Subjects
Details
- Language :
- English
- ISSN :
- 00225355
- Database :
- OpenAIRE
- Journal :
- Journal of Vacuum Science and Technology, Journal of Vacuum Science and Technology, 2008, 26, pp.1960-1963. ⟨10.1116/1.3021371⟩, Journal of Vacuum Science and Technology B, Journal of Vacuum Science and Technology B, 2008, 26, pp.1960-1963. ⟨10.1116/1.3021371⟩
- Accession number :
- edsair.doi.dedup.....b235163ac00d095daf8aa944d267b7c2
- Full Text :
- https://doi.org/10.1116/1.3021371⟩