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Effect of Static and Rotating Magnetic Fields on Low-Temperature Fabrication of InGaZnO Thin-Film Transistors
- Source :
- ACS applied materialsinterfaces. 10(19)
- Publication Year :
- 2018
-
Abstract
- We suggest thermal treatment with static magnetic fields (SMFs) or rotating magnetic fields (RMFs) as a new technique for the activation of indium–gallium–zinc oxide thin-film transistors (IGZO TFTs). Magnetic interactions between metal atoms in IGZO films and oxygen atoms in air by SMFs or RMFs can be expected to enhance metal–oxide (M–O) bonds, even at low temperature (150 °C), through attraction of metal and oxygen atoms having their magnetic moments aligned in the same direction. Compared to IGZO TFTs with only thermal treatment at 300 °C, IGZO TFTs under an RMF (1150 rpm) at 150 °C show superior or comparable characteristics: field-effect mobility of 12.68 cm2 V–1 s–1, subthreshold swing of 0.37 V dec–1, and on/off ratio of 1.86 × 108. Although IGZO TFTs under an SMF (0 rpm) can be activated at 150 °C, the electrical performance is further improved in IGZO TFTs under an RMF (1150 rpm). These improvements of IGZO TFTs under an RMF (1150 rpm) are induced by increases in the number of M–O bonds due to e...
- Subjects :
- 010302 applied physics
Materials science
Fabrication
Magnetic moment
business.industry
Transistor
Oxide
02 engineering and technology
Thermal treatment
021001 nanoscience & nanotechnology
01 natural sciences
Magnetic field
law.invention
chemistry.chemical_compound
Ferromagnetism
chemistry
Thin-film transistor
law
0103 physical sciences
Optoelectronics
General Materials Science
0210 nano-technology
business
Subjects
Details
- ISSN :
- 19448252
- Volume :
- 10
- Issue :
- 19
- Database :
- OpenAIRE
- Journal :
- ACS applied materialsinterfaces
- Accession number :
- edsair.doi.dedup.....b29ffbf8be52a61addb54f868326d268