High performance, electroforming-free, thin film memristors using ionic Na0.5Bi0.5TiO3

Here, in ionically conducting Na0.5Bi0.5TiO3 (NBT), we explore the link between growth parameters, stoichiometry and resistive switching behavior and show NBT to be a highly tunable system. We show that the combination of oxygen ionic vacancies and low-level electronic conduction is important for controlling Schottky barrier interfacial switching. We achieve a large ON/OFF ratio for high resistance/low resistance (RHRS/RLRS), enabled by an almost constant RHRS of ∼109 Ω, and composition-tunable RLRS value modulated by growth temperature. RHRS/RLRS ratios of up to 104 and pronounced resistive switching at low voltages (SET voltage of