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Reflectance anisotropy spectroscopy: A probe to explore organic epitaxial growth
- Source :
- Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 27:1029-1034
- Publication Year :
- 2009
- Publisher :
- American Vacuum Society, 2009.
-
Abstract
- Reflectance anisotropy spectroscopy (RAS) is demonstrated to be particularly suitable for studying the deposition of organic epitaxial layers in ultrahigh vacuum by organic molecular beam epitaxy, thanks to its high sensitivity and applicability in situ. In the case of α-quaterthiophene, both homoepitaxy and heteroepitaxy have been monitored, demonstrating the crystallinity of the films up to tens of monolayers and the epitaxial relation to the substrate. In both cases, optical RAS data are compared to the results of ex situ characterization of the same samples by atomic force microscopy.© 2009 American Vacuum Society
- Subjects :
- Quaterthiophene
Materials science
Vacuum
Absorption spectroscopy
Ex situ
Analytical chemistry
Reflection
Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Epitaxial relations
Substrate (electronics)
Molecular dynamics
Optical microscopy
Epitaxy
Crystallinity
Heteroepitaxy
High sensitivity
Homoepitaxy
In-situ
Organic molecular beam epitaxy
Reflectance anisotropy spectroscopy
Anisotropy
Atomic force microscopy
Epitaxial films
Epitaxial layers
Heterojunction bipolar transistors
Molecular beam epitaxy
Molecular beams
Monolayers
Vacuum deposition
Epitaxial growth
Settore FIS/03 - Fisica della Materia
Coatings and Films
Thin film
Molecular beam epitaxy, in situ characterization, reflectivity, atomic force microscopy, organic semiconductor
Spectroscopy
Surfaces
FIS/01 - FISICA SPERIMENTALE
sense organs
Subjects
Details
- ISSN :
- 15208559 and 07342101
- Volume :
- 27
- Database :
- OpenAIRE
- Journal :
- Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
- Accession number :
- edsair.doi.dedup.....b3618ae4db426f9e2d5693b3eb4f2606
- Full Text :
- https://doi.org/10.1116/1.3155399