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Peculiar properties of preferential sputtering of PbTe, SnTe, and GeTe by Ar+ ion plasma
- Source :
- Materials Science in Semiconductor Processing. 88:103-108
- Publication Year :
- 2018
- Publisher :
- Elsevier BV, 2018.
-
Abstract
- Sputtering of PbTe, SnTe and GeTe compounds having both small and large differences in the individual components’ masses by Ar+ plasma under Secondary Neutral Mass Spectrometry (SNMS) conditions are investigated. The effect of preferential sputtering and its peculiar features caused by the different ratios between masses of the IVB atoms and tellurium were observed. The method and the empirical relationships for determination of the relative detection factor (RDF) of the intrinsic components of the compounds are suggested. It is shown that RDF of Te and metal species of the investigated samples isn’t a constant, but depends on sputtering energy. These dependences are explained by the changes of the sputtering surface morphology and the impact of mass of the sputtered species on the fraction of the species flux ejected into the solid angle collected by the spectrometer mass analyzer. The limits of applicability of SNMS for quantitative analysis of composite samples with big differences in masses of their constituents are established. A possible solution for such cases is proposed. It is shown that in the sequence of PbTe-SnTe-GeTe compounds the surface binding energy of the metal components decreases in the direction from lighter to heavier atom.
- Subjects :
- Materials science
Analytical chemistry
chemistry.chemical_element
Fizikai tudományok
02 engineering and technology
Mass spectrometry
01 natural sciences
Ion
Metal
Természettudományok
Sputtering
0103 physical sciences
Atom
General Materials Science
010302 applied physics
Spectrometer
Mechanical Engineering
Plasma
021001 nanoscience & nanotechnology
Condensed Matter Physics
chemistry
Mechanics of Materials
visual_art
visual_art.visual_art_medium
0210 nano-technology
Tellurium
Subjects
Details
- ISSN :
- 13698001
- Volume :
- 88
- Database :
- OpenAIRE
- Journal :
- Materials Science in Semiconductor Processing
- Accession number :
- edsair.doi.dedup.....b3a6a6e88cd0c30c852f5e53affd1d63