Electrical properties of Au/CdZnTe/Au detectors grown by the boron oxide encapsulated Vertical Bridgman technique

MLA

A.A. Turturici, et al. “Electrical Properties of Au/CdZnTe/Au Detectors Grown by the Boron Oxide Encapsulated Vertical Bridgman Technique.” Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, vol. 830, Sept. 2016, pp. 243–50. EBSCOhost, https://doi.org/10.1016/j.nima.2016.05.124.

APA

A.A. Turturici, G. Benassi, Manuele Bettelli, Giuseppe Raso, Andrea Zappettini, Leonardo Abbene, Gaetano Gerardi, Nicola Zambelli, Fabio Principato, & Davide Calestani. (2016). Electrical properties of Au/CdZnTe/Au detectors grown by the boron oxide encapsulated Vertical Bridgman technique. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 830, 243–250. https://doi.org/10.1016/j.nima.2016.05.124

Chicago

A.A. Turturici, G. Benassi, Manuele Bettelli, Giuseppe Raso, Andrea Zappettini, Leonardo Abbene, Gaetano Gerardi, Nicola Zambelli, Fabio Principato, and Davide Calestani. 2016. “Electrical Properties of Au/CdZnTe/Au Detectors Grown by the Boron Oxide Encapsulated Vertical Bridgman Technique.” Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 830 (September): 243–50. doi:10.1016/j.nima.2016.05.124.