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Sub-100 μs nanoimprint lithography at wafer scale

Authors :
Maurizio Tormen
Michele Pianigiani
Enrico Sovernigo
Alessandro Pozzato
Massimo Tormen
Tormen, Massimo
Sovernigo, Enrico
Pozzato, Alessandro
Pianigiani, Michele
Tormen, Maurizio
Source :
Microelectronic engineering 141 (2015): 21–26. doi:10.1016/j.mee.2015.01.002, info:cnr-pdr/source/autori:Tormen, Massimo; Sovernigo, Enrico; Pozzato, Alessandro; Pianigiani, Michele; Tormen, Maurizio/titolo:Sub-100 mu s nanoimprint lithography at wafer scale/doi:10.1016%2Fj.mee.2015.01.002/rivista:Microelectronic engineering/anno:2015/pagina_da:21/pagina_a:26/intervallo_pagine:21–26/volume:141
Publication Year :
2015

Abstract

Display Omitted A full 4¿ wafer is nanopatterned by an ultrafast thermal NIL process in 100µs.Stamps with integrated heater enable ultrafast cycles at very high temperature.The thermal cycle is implemented with a single short very intense current pulse.A new tool for the ultrafast NIL (or pulsed-NIL) process has been developed.The process applies to a wide range of thermoplastic materials. We present here an ultrafast thermal NIL technology, which enables the patterning of full wafers on the 100µs time-scale. This technique makes use of stamps with a heating layer integrated beneath their nanostructured surfaces. Injecting a single, short (

Details

Language :
English
Database :
OpenAIRE
Journal :
Microelectronic engineering 141 (2015): 21–26. doi:10.1016/j.mee.2015.01.002, info:cnr-pdr/source/autori:Tormen, Massimo; Sovernigo, Enrico; Pozzato, Alessandro; Pianigiani, Michele; Tormen, Maurizio/titolo:Sub-100 mu s nanoimprint lithography at wafer scale/doi:10.1016%2Fj.mee.2015.01.002/rivista:Microelectronic engineering/anno:2015/pagina_da:21/pagina_a:26/intervallo_pagine:21–26/volume:141
Accession number :
edsair.doi.dedup.....b5d6f34296739a24c701794e426555d0
Full Text :
https://doi.org/10.1016/j.mee.2015.01.002