Phosphorus doping of silicon by proton induced nuclear reactions

We propose a method to dope silicon with phosphorus by means of the nuclear resonant reaction 30Si(p,γ)31P, which takes place when a natural silicon target is bombarded with a few MeV proton beam. This alternative method considerably reduces the usual target damage produced by the more commonly used direct phosphorus implantation. Partial support from the Spanish DGICYT (Project Nos. PB92-0341 and PB93-1125). N.P.K. thanks the Spanish DGICYT for financial support (SAB93-0182) during his sabbatical stay in the Universidad de Murcia.