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2DEG based on strained Si on SGOI substrate
- Source :
- Physica. E, Low-dimensional systems and nanostructures, 40 (2008): 1611–1613. doi:10.1016/j.physe.2007.09.159, info:cnr-pdr/source/autori:L. Di Gaspare 1; A. Notargiacomo 1-2; E. Giovine 2; M. De Seta 1; G. Capellini 1; M. Pea 1; G. Ciasca 1; F. Evangelisti 1-2/titolo:2DEG based on strained Si on SGOI substrate/doi:10.1016%2Fj.physe.2007.09.159/rivista:Physica. E, Low-dimensional systems and nanostructures (Print)/anno:2008/pagina_da:1611/pagina_a:1613/intervallo_pagine:1611–1613/volume:40
- Publication Year :
- 2008
- Publisher :
- Elsevier BV, 2008.
-
Abstract
- We report on the realization of high-mobility two-dimensional electron gas based on modulation-doped Si/SiGe heterostructure grown directly on thin SiGe-On-Insulator (SGOI) substrate. The samples were grown by using low-pressure chemical vapor deposition. A pregrowth procedure for the cleaning of the SGOI surface that preserves the integrity and the composition of the substrate was developed. An electron mobility as high as 10(5)cm(2)V(-1) s(-1) at T = 0.4 K and 2000 cm(2)V(-1) s(-1) at T = 300 K was obtained. (C) 2007 Elsevier B.V. All rights reserved.
- Subjects :
- Electron mobility
Materials science
Silicon
business.industry
chemistry.chemical_element
Heterojunction
Chemical vapor deposition
Substrate (electronics)
Condensed Matter Physics
Atomic and Molecular Physics, and Optics
SGOI
Electronic, Optical and Magnetic Materials
chemistry
2DEG
SiGe heterostructure
Optoelectronics
business
Fermi gas
Modulation doping
Subjects
Details
- ISSN :
- 13869477
- Volume :
- 40
- Database :
- OpenAIRE
- Journal :
- Physica E: Low-dimensional Systems and Nanostructures
- Accession number :
- edsair.doi.dedup.....b7e78bd1fe207a29a9cdafb284bddd35