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2DEG based on strained Si on SGOI substrate

Authors :: Ennio Giovine
Florestano Evangelisti
Gabriele Ciasca
M. De Seta
Giovanni Capellini
Andrea Notargiacomo
M. Pea
L. Di Gaspare
DI GASPARE, Luciana
Notargiacomo, A
Giovine, E
DE SETA, Monica
Capellini, Giovanni
Pea, M
Ciasca, G
Evangelisti, F.
L., DI GASPARE
A., Notargiacomo
E., Giovine
M., DE SETA
G., Capellini
M., Pea
G., Ciasca
Evangelisti, Florestano
Capellini, G
Di Gaspare, L.
Notargiacomo, A.
Giovine, E.
Capellini, G.
Pea, M.
Ciasca, G.
Source :: Physica. E, Low-dimensional systems and nanostructures, 40 (2008): 1611–1613. doi:10.1016/j.physe.2007.09.159, info:cnr-pdr/source/autori:L. Di Gaspare 1; A. Notargiacomo 1-2; E. Giovine 2; M. De Seta 1; G. Capellini 1; M. Pea 1; G. Ciasca 1; F. Evangelisti 1-2/titolo:2DEG based on strained Si on SGOI substrate/doi:10.1016%2Fj.physe.2007.09.159/rivista:Physica. E, Low-dimensional systems and nanostructures (Print)/anno:2008/pagina_da:1611/pagina_a:1613/intervallo_pagine:1611–1613/volume:40
Publication Year :: 2008
Publisher :: Elsevier BV, 2008.
Abstract: We report on the realization of high-mobility two-dimensional electron gas based on modulation-doped Si/SiGe heterostructure grown directly on thin SiGe-On-Insulator (SGOI) substrate. The samples were grown by using low-pressure chemical vapor deposition. A pregrowth procedure for the cleaning of the SGOI surface that preserves the integrity and the composition of the substrate was developed. An electron mobility as high as 10(5)cm(2)V(-1) s(-1) at T = 0.4 K and 2000 cm(2)V(-1) s(-1) at T = 300 K was obtained. (C) 2007 Elsevier B.V. All rights reserved.