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Thickness Considerations of Two-Dimensional Layered Semiconductors for Transistor Applications
- Source :
- Scientific Reports
- Publication Year :
- 2016
- Publisher :
- Uppsala universitet, Fasta tillståndets elektronik, 2016.
-
Abstract
- Layered two-dimensional semiconductors have attracted tremendous attention owing to their demonstrated excellent transistor switching characteristics with a large ratio of on-state to off-state current, Ion/Ioff. However, the depletion-mode nature of the transistors sets a limit on the thickness of the layered semiconductor films primarily determined by a given Ion/Ioff as an acceptable specification. Identifying the optimum thickness range is of significance for material synthesis and device fabrication. Here, we systematically investigate the thickness-dependent switching behavior of transistors with a wide thickness range of multilayer-MoS2 films. A difference in Ion/Ioff by several orders of magnitude is observed when the film thickness, t, approaches a critical depletion width. The decrease in Ion/Ioff is exponential for t between 20 nm and 100 nm, by a factor of 10 for each additional 10 nm. For t larger than 100 nm, Ion/Ioff approaches unity. Simulation using technical computer-aided tools established for silicon technology faithfully reproduces the experimentally determined scaling behavior of Ion/Ioff with t. This excellent agreement confirms that multilayer-MoS2 films can be approximated as a homogeneous semiconductor with high surface conductivity that tends to deteriorate Ion/Ioff. Our findings are helpful in guiding material synthesis and designing advanced field-effect transistors based on the layered semiconductors.
- Subjects :
- Fabrication
Materials science
Silicon
chemistry.chemical_element
02 engineering and technology
Conductivity
Electrical Engineering, Electronic Engineering, Information Engineering
01 natural sciences
Article
Ion
law.invention
law
0103 physical sciences
Elektroteknik och elektronik
Scaling
010302 applied physics
Multidisciplinary
business.industry
Transistor
Orders of magnitude (numbers)
021001 nanoscience & nanotechnology
Semiconductor
chemistry
Optoelectronics
0210 nano-technology
business
Subjects
Details
- Language :
- English
- Database :
- OpenAIRE
- Journal :
- Scientific Reports
- Accession number :
- edsair.doi.dedup.....b975137dac823ebe02783320f17a1d72