A10 MHz micromechanical lamé-mode bulk oscillator operating in nonlinear region

In this paper, the operation of a high Q–10 MHz micromechanical oscillator is presented. A lame-mode bulk resonator operating in nonlinear region is integrated with low noise off-chip interface circuitry. Benefiting from high quality factor as well as large energy storage capability of the bulk resonator, low phase noise performance has been achieved even when the resonator is operating in nonlinear region with a 4Vp-p oscillation output. The oscillator shows −138 dBc/Hz noise floor and −132 dBc/Hz 1 kHz away from the carrier, which meets the cellular phase noise requirement of −130 dBc/Hz at 1kHz offset for 13 MHz GSM reference oscillators.