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Intersystem crossing and exciton–defect coupling of spin defects in hexagonal boron nitride
- Source :
- npj Computational Materials, Vol 7, Iss 1, Pp 1-8 (2021)
- Publication Year :
- 2021
- Publisher :
- Nature Portfolio, 2021.
-
Abstract
- Despite the recognition of two-dimensional (2D) systems as emerging and scalable host materials of single-photon emitters or spin qubits, the uncontrolled, and undetermined chemical nature of these quantum defects has been a roadblock to further development. Leveraging the design of extrinsic defects can circumvent these persistent issues and provide an ultimate solution. Here, we established a complete theoretical framework to accurately and systematically design quantum defects in wide-bandgap 2D systems. With this approach, essential static and dynamical properties are equally considered for spin qubit discovery. In particular, many-body interactions such as defect–exciton couplings are vital for describing excited state properties of defects in ultrathin 2D systems. Meanwhile, nonradiative processes such as phonon-assisted decay and intersystem crossing rates require careful evaluation, which competes together with radiative processes. From a thorough screening of defects based on first-principles calculations, we identify promising single-photon emitters such as SiVV and spin qubits such as TiVV and MoVV in hexagonal boron nitride. This work provided a complete first-principles theoretical framework for defect design in 2D materials.
- Subjects :
- Coupling
Materials science
Condensed matter physics
Exciton
02 engineering and technology
021001 nanoscience & nanotechnology
01 natural sciences
Computer Science Applications
QA76.75-76.765
Intersystem crossing
Mechanics of Materials
Modeling and Simulation
Qubit
Excited state
0103 physical sciences
Radiative transfer
TA401-492
General Materials Science
Computer software
010306 general physics
0210 nano-technology
Quantum
Materials of engineering and construction. Mechanics of materials
Spin-½
Subjects
Details
- Language :
- English
- ISSN :
- 20573960
- Volume :
- 7
- Issue :
- 1
- Database :
- OpenAIRE
- Journal :
- npj Computational Materials
- Accession number :
- edsair.doi.dedup.....ba7bbda5b8cbb1082eed6e30a96ab4f5