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Random telegraph signals caused by a single dopant in a metal–oxide–semiconductor field effect transistor at low temperature
- Source :
- AIP Advances, Vol 10, Iss 5, Pp 055025-055025-13 (2020)
- Publication Year :
- 2020
- Publisher :
- AIP Publishing LLC, 2020.
-
Abstract
- While the importance of atomic-scale features in silicon-based device for quantum application has been recognized and even the placement of a single atom is now feasible, the role of a dopant in the substrate has not attracted much attention in the context of quantum technology. In this paper, we report random telegraph signals (RTSs) originated from trapping and detrapping of an electron by a donor in the substrate of a p-type metal–oxide–semiconductor field-effect-transistor. RTSs, not seen when the substrate was grounded, were observed when a positive bias was applied to the substrate. The comprehensive study on the signals observed reveals that the nature of the RTSs is discrete threshold voltage variations due to the change in the depletion layer width depending on the charge state of a single dopant, neutral or positively charged.
- Subjects :
- 010302 applied physics
Materials science
Dopant
Silicon
business.industry
General Physics and Astronomy
chemistry.chemical_element
Context (language use)
02 engineering and technology
Substrate (electronics)
021001 nanoscience & nanotechnology
01 natural sciences
lcsh:QC1-999
Threshold voltage
Quantum technology
Depletion region
chemistry
0103 physical sciences
Optoelectronics
Field-effect transistor
0210 nano-technology
business
lcsh:Physics
Subjects
Details
- Language :
- English
- ISSN :
- 21583226
- Volume :
- 10
- Issue :
- 5
- Database :
- OpenAIRE
- Journal :
- AIP Advances
- Accession number :
- edsair.doi.dedup.....bb72ba3fc9b78b23991d10c62e6f62c5