Back to Search Start Over

Toward an Understanding of Thin-Film Transistor Performance in Solution-Processed Amorphous Zinc Tin Oxide (ZTO) Thin Films

Authors :
Nico Koslowski
Stefan Weber
Conrad Guhl
Jörg J. Schneider
Rudolf C. Hoffmann
Shawn Sanctis
Emre Erdem
Source :
ACS Applied Materials & Interfaces. 9:21328-21337
Publication Year :
2017
Publisher :
American Chemical Society (ACS), 2017.

Abstract

Amorphous zinc tin oxide (ZTO) thin films are accessible by a molecular precursor approach using mononuclear zinc(II) and tin(II) compounds with methoxyiminopropionic acid ligands. Solution processing of two precursor solutions containing a mixture of zinc and tin(II)–methoxyiminopropinato complexes results in the formation of smooth homogeneous thin films, which upon calcination are converted into the desired semiconducting amorphous ZTO thin films. ZTO films integrated within a field-effect transistor (FET) device exhibit an active semiconducting behavior in the temperature range between 250 and 400 °C, giving an increased performance, with mobility values between μ = 0.03 and 5.5 cm2/V s, with on/off ratios increasing from 105 to 108 when going from 250 to 400 °C. Herein, our main emphasis, however, was on an improved understanding of the material transformation pathway from weak to high performance of the semiconductor in a solution-processed FET as a function of the processing temperature. We have co...

Details

ISSN :
19448252 and 19448244
Volume :
9
Database :
OpenAIRE
Journal :
ACS Applied Materials & Interfaces
Accession number :
edsair.doi.dedup.....bbd8da499ef0f7b1e04c464bcfdcecca
Full Text :
https://doi.org/10.1021/acsami.7b06203