Back to Search
Start Over
Observation of Highly Reproducible Resistive-Switching Behavior from Solution-Based ZnO Nanorods
- Source :
- Journal of Nanoscience and Nanotechnology. 13:6212-6215
- Publication Year :
- 2013
- Publisher :
- American Scientific Publishers, 2013.
-
Abstract
- The authors report upon highly reproducible, unipolar resistive-switching random access memory with narrow voltage distributions using Au/ZnO nanorods/Au structures. The ZnO nanorods resistive switching layer was prepared by a simple spin-coating process on a sol-gel seed layer, and from its size confinement effect, this device showed narrow set/reset voltage distributions and low voltage operations compared with Au/ZnO thin film/Au structures. With this electrical uniformity, the device exhibited good reliabilities such as long retention (> 70000 sec) and high endurance (> 5000 cycles).
Details
- ISSN :
- 15334899 and 15334880
- Volume :
- 13
- Database :
- OpenAIRE
- Journal :
- Journal of Nanoscience and Nanotechnology
- Accession number :
- edsair.doi.dedup.....bccd766f8479c7beca34f6a42436531e