Carrier Transport across a Few Grain Boundaries in Highly Doped Polycrystalline Silicon

MLA

Toshio Kamiya, et al. “Carrier Transport across a Few Grain Boundaries in Highly Doped Polycrystalline Silicon.” Japanese Journal of Applied Physics, vol. 40, June 2001, p. L615. EBSCOhost, https://doi.org/10.1143/jjap.40.l615.

APA

Toshio Kamiya, Y. Furuta, Yong T. Tan, Zahid A. K. Durrani, Kazuo Nakazato, Kenji Taniguchi, Haroon Ahmed, & Hiroshi Mizuta. (2001). Carrier Transport across a Few Grain Boundaries in Highly Doped Polycrystalline Silicon. Japanese Journal of Applied Physics, 40, L615. https://doi.org/10.1143/jjap.40.l615

Chicago

Toshio Kamiya, Y. Furuta, Yong T. Tan, Zahid A. K. Durrani, Kazuo Nakazato, Kenji Taniguchi, Haroon Ahmed, and Hiroshi Mizuta. 2001. “Carrier Transport across a Few Grain Boundaries in Highly Doped Polycrystalline Silicon.” Japanese Journal of Applied Physics 40 (June): L615. doi:10.1143/jjap.40.l615.