N-type conduction in SnS by anion substitution with Cl

Relatively nontoxic, earth-abundant Cl was incorporated into n-type SnS as a dopant. The existence of impurity phases was carefully identified in Sn(S1− x − y Cl x )-dense ceramics. The highest electron mobility (8.3 cm2 V−1 s−1) in n-type conduction was achieved in samples with x ≥ 0.005. Cl concentration is critical for conduction-type conversion, whereas carrier density and electron mobility are determined by sulfur-site deficiency. Carrier transport is explained by grain boundary potential barrier scattering in undoped p-type samples and by ionized impurity scattering in Cl-doped n-type samples.