Photoelectrochemical Oxidation Assisted Catalyst-Referred Etching for SiC (0001) Surface

Daisetsu Toh, Pho Van Bui, Kazuto Yamauchi, and Yasuhisa Sano, “Photoelectrochemical Oxidation Assisted Catalyst-Referred Etching for SiC (0001) Surface,” Int. J. Automation Technol., Vol.15, No.1, pp. 74-79, 2021.
In a previous study, we developed an abrasive-free polishing method named catalyst-referred etching (CARE) and used it for the planarization of silicon carbide (SiC) (0001). In this method, Si atoms at step edges are preferentially removed through a catalytically assisted hydrolysis reaction to obtain an atomically smooth and crystallographically well-ordered surface. However, the removal rate is low (