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Intrinsic excitonic emission and valley Zeeman splitting in epitaxial MS2 (M = Mo and W) monolayers on hexagonal boron nitride
- Source :
- Nano Research. 11:6227-6236
- Publication Year :
- 2018
- Publisher :
- Springer Science and Business Media LLC, 2018.
-
Abstract
- Two-dimensional (2D) semiconductors, represented by 2D transition metal dichalcogenides (TMDs), exhibit rich valley physics due to strong spin-orbit/spin-valley coupling. The most common way to probe such 2D systems is to utilize optical methods, which can monitor light emissions from various excitonic states and further help in understanding the physics behind such phenomena. Therefore, 2D TMDs with good optical quality are in great demand. Here, we report a method to directly grow epitaxial WS2 and MoS2 monolayers on hexagonal boron nitride (hBN) flakes with a high yield and high optical quality; these monolayers show better intrinsic light emission features than exfoliated monolayers from natural crystals. For the first time, the valley Zeeman splitting of WS2 and MoS2 monolayers on hBN has been visualized and systematically investigated. This study paves a new way to produce high optical quality WS2 and MoS2 monolayers and to exploit their intrinsic properties in a multitude of applications. MOE (Min. of Education, S’pore)
- Subjects :
- Yield (engineering)
Materials science
02 engineering and technology
Chemical vapor deposition
Epitaxy
01 natural sciences
symbols.namesake
Transition metal
Physics [Science]
Transition Metal Dichalcogenides
0103 physical sciences
Monolayer
General Materials Science
Electrical and Electronic Engineering
010306 general physics
Zeeman effect
business.industry
021001 nanoscience & nanotechnology
Condensed Matter Physics
Atomic and Molecular Physics, and Optics
Semiconductor
symbols
Intrinsic Excitonic Emission
Optoelectronics
Light emission
0210 nano-technology
business
Subjects
Details
- ISSN :
- 19980000 and 19980124
- Volume :
- 11
- Database :
- OpenAIRE
- Journal :
- Nano Research
- Accession number :
- edsair.doi.dedup.....c5db35479810c098548a72048b600adf