Quantitative Imaging of InGaAs/GaAs Layers Using Transmission Electron Microscopy Methods: Characterization of Stresses and Chemical Composition

Authors :: Pierre Stadelmann
Eli Kapon
Philippe A. Buffat
Klaus Leifer
Alok Rudra
J. Cagnon
Abstract: Reference LPN-ARTICLE-2002-003doi:10.1016/S0022-0248(01)02297-7View record in Web of Science Record created on 2008-02-29, modified on 2017-05-12

Subjects :: Nanostructure
business.industry
Chemistry
Heterojunction
Condensed Matter Physics
Characterization (materials science)
Inorganic Chemistry
Optics
Residual stress
Transmission electron microscopy
Quantum dot
Materials Chemistry
business
Chemical composition
Quantum well

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