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Epitaxial growth of quaterthiophene thin films by organic molecular beam deposition
- Publication Year :
- 2001
- Publisher :
- PERGAMON-ELSEVIER SCIENCE LTD, 2001.
-
Abstract
- Organic molecular beam deposition (OMBD) in ultra-high vacuum is a valuable technique to carefully control the solid-state structure and properties of molecular thin films. Quaterthiophene (4T) and alpha,omega -dihexyl-quaterthiophene (DH4T) thin alms deposited by OMBD on potassium acid phthalate are investigated by atomic force microscopy (AFM). Direct evidence of epitaxial growth of the thin films is obtained by molecular resolution AFM images. The comparison between 4T and DH4T films reveals the role of chemical substituent groups in modifying the film properties
- Subjects :
- Atomic force microscopy
thin film
technology, industry, and agriculture
Substituent
Analytical chemistry
epitaxy
molecular semiconductor
film structure
Condensed Matter Physics
Epitaxy
Surfaces, Coatings and Films
Organic semiconductor
chemistry.chemical_compound
Carbon film
FIS/01 - FISICA SPERIMENTALE
chemistry
Thin film
organic molecular beam deposition
Instrumentation
Molecular beam deposition
Molecular beam epitaxy
Subjects
Details
- Language :
- English
- Database :
- OpenAIRE
- Accession number :
- edsair.doi.dedup.....c7e4769152a4d0edda6a27458dc3144d