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Effect of Sb in thick InGaAsSbN layers grown by liquid phase epitaxy
- Source :
- Journal of Crystal Growth. 483:140-146
- Publication Year :
- 2018
- Publisher :
- Elsevier BV, 2018.
-
Abstract
- Dilute nitride InGaAsSbN layers grown by low-temperature liquid phase epitaxy are studied in comparison with quaternary InGaAsN layers grown at the same growth conditions to understand the effect of Sb in the alloy. The lattice mismatch to the GaAs substrate is found to be slightly larger for the InGaAsSbN layers, which is explained by the large atomic radius of Sb. A reduction of the band gap energy with respect to InGaAsN is demonstrated by means of photoluminescence (PL), surface photovoltage (SPV) spectroscopy and tight-binding calculations. The band-gap energies determined from PL and ellipsometry measurements are in good agreement, while the SPV spectroscopy and the tight-binding calculations provide lower values. Possible reasons for these discrepancies are discussed. The PL spectra reveal localized electronic states in the band gap near the conduction band edge, which is confirmed by SPV spectroscopy. The analysis of the power dependence of the integrated PL has allowed determining the dominant radiative recombination mechanisms in the layers. The values of the refraction index in a wide spectral region are found to be higher for the Sb containing layers.
- Subjects :
- Technology
Photoluminescence
Materials science
ALLOYS
0306 Physical Chemistry (Incl. Structural)
Band gap
Characterization
Surface photovoltage
Materials Science
BAND-GAP
InGaAsSbN
Analytical chemistry
Materials Science, Multidisciplinary
02 engineering and technology
Substrate (electronics)
Nitride
Epitaxy
SEMICONDUCTORS
01 natural sciences
Physics, Applied
Inorganic Chemistry
Dilute nitrides
DEPENDENCE
Ellipsometry
0103 physical sciences
Materials Chemistry
QUALITY
DIODES
Spectroscopy
Applied Physics
010302 applied physics
Science & Technology
Crystallography
Liquid phase epitaxy
Physics
LOCALIZATION
OPTICAL-PROPERTIES
Computer simulation
GAASN
021001 nanoscience & nanotechnology
Condensed Matter Physics
Semiconducting pentanary alloys
Physical Sciences
PHOTOLUMINESCENCE
0210 nano-technology
0303 Macromolecular And Materials Chemistry
Subjects
Details
- ISSN :
- 00220248
- Volume :
- 483
- Database :
- OpenAIRE
- Journal :
- Journal of Crystal Growth
- Accession number :
- edsair.doi.dedup.....c7fcac69e695caedf625a12950300363