Density of states of a two-dimensional electron gas measured by high resolution photoelectron spectroscopy

We present high energy-resolution photoemission measurements of the spectral density at the discrete quantized electronic levels of a two-dimensional (2D) electron gas. The dynamical 2D electron gas has been obtained by generating a strong accumulation layer at the (110) surface of narrow-gap III–V semiconductors. Exploitation of a number of cases generating band bending (metallic chains or clusters, atomic structure, defects) demonstrates the generality of 2D electron gas formation at charge-accumulated semiconductor surfaces. A self-consistent solution of the Poisson and Schrodinger equations gives the potential well shape, the sub-band energy level position and the accumulated charge density, in excellent agreement with the present experimental data.