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Molecular dynamics simulation on the effect of dislocation structures on the retention and distribution of helium ions implanted into silicon

Authors :
Fengzhou Fang
Lei Liu
Zongwei Xu
Ying Song
Rongrong Li
Jintong Wu
Li Ji
Source :
Nanotechnology and Precision Engineering, Vol 3, Iss 2, Pp 81-87 (2020)
Publication Year :
2020
Publisher :
AIP Publishing LLC, 2020.

Abstract

To investigate the effect of dislocation structures on the initial formation stage of helium bubbles, molecular dynamics (MD) simulations were used in this study. The retention rate and distribution of helium ions with 2 keV energy implanted into silicon with dislocation structures were studied via MD simulation. Results show that the dislocation structures and their positions in the sample affect the helium ion retention rate. The analysis on the three-dimensional distribution of helium ions show that the implanted helium ions tend to accumulate near the dislocation structures. Raman spectroscopy results show that the silicon substrate surface after helium ion implantation displayed tensile stress as indicated by the blue shift of Raman peaks.

Details

Language :
English
ISSN :
25895540
Volume :
3
Issue :
2
Database :
OpenAIRE
Journal :
Nanotechnology and Precision Engineering
Accession number :
edsair.doi.dedup.....ca55831b0d66b6648ee70fe0718b1a8f