ICPECVD-Dielectric Thin-Films CMOS-Compatible: Trends in Eco-Friendly Deposition

Depositions of the dielectric thin-films at low temperatures without greenhouse gas, nitrous oxide (N $$_{2}$$ O) is one of the most critical challenges in modern technologies for microelectronics, optoelectronics, and nanoelectronics. The present study demonstrates that thin dielectric layers deposit by inductively-coupled plasma-enhanced chemical vapor deposition (ICPECVD) technology at lower temperatures ( $$< 300\,^{\circ }$$ C) can be successfully optimized and has the potential to reduce the environmental impact significantly. A particular focus is made on the improvement of the optical properties that are strongly correlated to the physicochemical bonds film properties. Typical deposition rates range from 10 to 20 nm/min, depending mainly on power, pressure, and gas flows. This study opens up large scale applications that require lower hydrogen content and a stable process. The presented results emphasize green manufacturing technologies and can be valuable for a wide range of applications using a complementary metal-oxide-semiconductor (CMOS)-compatible technology.