High mobility InAs/AlInAs metamorphic heterostructures on InP (001)

Authors :: J. Lastennet
F. Mollot
Xavier Wallart
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN)
Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)
Source :: Proceedings of the 17th International Conference on Indium Phosphide and Related Materials, IPRM 05
Publication Year :: 2005
Publisher :: HAL CCSD, 2005.
Abstract: We present the optimization of the metamorphic growth of InAs/InAlAs heterostructures on InP(001). We obtain the best electron mobility, 21500 cm/sup 2//V.s at 300K and 179000 cm/sup 2//V.s at 77K, with a composite InAs/InGaAs channel.

Subjects :: 010302 applied physics
Semiconductor thin films
Electron mobility
Materials science
business.industry
Composite channel
Heterojunction
02 engineering and technology
021001 nanoscience & nanotechnology
01 natural sciences
Gallium arsenide
chemistry.chemical_compound
chemistry
Molecular beam epitaxial growth
0103 physical sciences
Indium phosphide
Optoelectronics
0210 nano-technology
business

Language :: English
Database :: OpenAIRE
Journal :: Proceedings of the 17th International Conference on Indium Phosphide and Related Materials, IPRM 05
Accession number :: edsair.doi.dedup.....cc4766ead9227c4c3f734da98d3d20df

Tools