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Highly stable low noise/high power AlN/GaN-on-silicon double heterostructure HEMTs operating at 40 GHz
- Source :
- Proceedings of 2013 IEEE International Reliability Physics Symposium, IRPS 2013, IEEE International Reliability Physics Symposium, IRPS 2013, IEEE International Reliability Physics Symposium, IRPS 2013, 2013, Monterey, CA, United States. paper 3C.3, 6 p., ⟨10.1109/IRPS.2013.6531985⟩
- Publication Year :
- 2013
- Publisher :
- HAL CCSD, 2013.
-
Abstract
- In this paper, an emerging double heterostructure high electron mobility transistor (DHFET) based on AlN/GaN/AlGaN grown on silicon substrate is presented. This configuration system allowed state-of-the-art GaN-on-silicon DC, RF output power and noise performances at 40 GHz, paving the way for high performance mmW cost-effective amplifiers. Preliminary reliability assessment has been performed on this new class of RF devices, showing promising mmW GaN-on-Si device stability for the first time.
- Subjects :
- Double Heterostructure
Materials science
Silicon
chemistry.chemical_element
02 engineering and technology
Substrate (electronics)
High-electron-mobility transistor
Double heterostructure
01 natural sciences
7. Clean energy
Noise (electronics)
Reliability (semiconductor)
High electron mobility transistors
0103 physical sciences
Hardware_INTEGRATEDCIRCUITS
HEMT
010302 applied physics
business.industry
Amplifier
Wide-bandgap semiconductor
Reliability
021001 nanoscience & nanotechnology
Gallium Nitride
chemistry
Optoelectronics
0210 nano-technology
business
Subjects
Details
- Language :
- English
- Database :
- OpenAIRE
- Journal :
- Proceedings of 2013 IEEE International Reliability Physics Symposium, IRPS 2013, IEEE International Reliability Physics Symposium, IRPS 2013, IEEE International Reliability Physics Symposium, IRPS 2013, 2013, Monterey, CA, United States. paper 3C.3, 6 p., ⟨10.1109/IRPS.2013.6531985⟩
- Accession number :
- edsair.doi.dedup.....cdfd0a969c47ab8dc38ff170c23f96a0