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Impact of Gate Driver Signal on Static Losses for a SiC Switch Built with Normally-Off JFETs and a Schottky Diode
- Source :
- Proceedings of the 2012 IEEE Energy Conversion Congress and Exposition, ECCE, ECCE, Sep 2012, Raleigh, United States. pp.1503, ⟨10.1109/ECCE.2012.6342636⟩
- Publication Year :
- 2012
- Publisher :
- HAL CCSD, 2012.
-
Abstract
- International audience; This document shows the behaviour of a SiC switch built with Normally-Off JFETs and a Schottky diode when the JFETs are controlled with a constant gate-to-source voltage or with a constant gate current. The JFETs are used in a direct and reverse conduction. The goal of this study is to determine a gate driver signal that minimizes static losses in the switch in spite of temperature variations. Two switches are tested: the first one is built with one JFET and one diode, the second one is built with four JFETs and one diode. It has been shown that in both cases, when reverse conduction is used, a current controlled gate driver leads to lower static losses.
- Subjects :
- Materials science
current injection
gate control
02 engineering and technology
01 natural sciences
chemistry.chemical_compound
0103 physical sciences
Normally-Off SiC JFET
0202 electrical engineering, electronic engineering, information engineering
Silicon carbide
Gate driver
Diode
010302 applied physics
business.industry
020208 electrical & electronic engineering
[SPI.NRJ]Engineering Sciences [physics]/Electric power
Electrical engineering
JFET
Schottky diode
reverse conduction
chemistry
Logic gate
Optoelectronics
MESFET
business
Voltage
Subjects
Details
- Language :
- English
- Database :
- OpenAIRE
- Journal :
- Proceedings of the 2012 IEEE Energy Conversion Congress and Exposition, ECCE, ECCE, Sep 2012, Raleigh, United States. pp.1503, ⟨10.1109/ECCE.2012.6342636⟩
- Accession number :
- edsair.doi.dedup.....ce1300c7df81167dd53331b138f68774
- Full Text :
- https://doi.org/10.1109/ECCE.2012.6342636⟩