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Ultrafast hot-carrier relaxation in silicon monitored by phase-resolved transient absorption spectroscopy
- Publication Year :
- 2020
- Publisher :
- American Physical Society (APS), 2020.
-
Abstract
- The relaxation dynamics of hot carriers in silicon (100) is studied via a novel holistic approach based on phase-resolved transient absorption spectroscopy with few-cycle optical pulses. After excitation by a sub-5 fs light pulse, strong electron-phonon coupling leads to an ultrafast momentum relaxation with time constant of 10 fs. The thermalization of the hot carriers occurs on a time constant of 150 fs, visible in the temporal evolution of the collision time as extracted from the Drude model. We find an increase of the collision time from 3 fs for the shortest timescales with a saturation at approximately 18 fs. Moreover, the optical effective mass of the hot carrier ensemble evolves on ultrafast timescales as well, with a bi-exponential decrease from 0.7 $m_e$ to about 0.125 $m_e$ and time constants of 4 fs and 58 fs. The presented information on the electron mass dynamics as well as the momentum-, energy-, and collision-scattering times with unprecedented time resolution is important for all hot carrier optoelectronic devices.<br />Comment: 6 pages, 5 figures
- Subjects :
- Condensed Matter - Materials Science
Materials science
Materials Science (cond-mat.mtrl-sci)
FOS: Physical sciences
Electron
Coupling (probability)
Drude model
Effective mass (spring–mass system)
ddc
Ultrafast laser spectroscopy
Saturation (graph theory)
Relaxation (physics)
Atomic physics
Spectroscopy
Subjects
Details
- Database :
- OpenAIRE
- Accession number :
- edsair.doi.dedup.....cef06735913a8680b2fcbd831e2c8099