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Plasmonic noise in silicon nanolayers
- Source :
- Journal of Applied Physics. 107:033710
- Publication Year :
- 2010
- Publisher :
- AIP Publishing, 2010.
-
Abstract
- We report a microscopic investigation of the spectrum of voltage fluctuations in nanometric n-Si layers. Theory makes use of a Monte Carlo simulator self-consistently coupled with a two-dimensional Poisson solver. We consider layers of variable thickness W in the range of 2–100 nm and variable length L in the range of 10–1000 nm embedded in an external dielectric medium. Calculations are performed at T=300 K for different doping levels and in the presence of an applied voltage of increasing strength. The spectra are found to exhibit peaks centered on the terahertz region. For W≥100 nm and carrier densities of 5×1017 and 5×1018 cm−3, the frequency peaks agree with the value of the three dimensional plasma frequency. For W≤100 nm, the results exhibit a plasma frequency that depends on L, thus implying that the oscillation mode is dispersive. The corresponding frequency covers a wide range of values of 0.2–10 THz and is in agreement with the values of the two-dimensional plasma frequency predicted by existin...
Details
- ISSN :
- 10897550 and 00218979
- Volume :
- 107
- Database :
- OpenAIRE
- Journal :
- Journal of Applied Physics
- Accession number :
- edsair.doi.dedup.....cf69497cc1cde4e5feaa5934dc52e033