Back to Search
Start Over
Ferroelectric switching of poly(vinylidene difluoride-trifluoroethylene) in metal-ferroelectric-semiconductor non-volatile memories with an amorphous oxide semiconductor
- Source :
- Applied Physics Letters, 106:093503, 1-4. American Institute of Physics, Applied Physics Letters, 9, 106
- Publication Year :
- 2015
-
Abstract
- Ferroelectric polarization switching of poly(vinylidene difluoride-trifluoroethylene) is investigated in different thin-film device structures, ranging from simple capacitors to dual-gate thin-film transistors (TFT). Indium gallium zinc oxide, a high mobility amorphous oxide material, is used as semiconductor. We find that the ferroelectric can be polarized in both directions in the metal-ferroelectric-semiconductor (MFS) structure and in the dual-gate TFT under certain biasing conditions, but not in the single-gate thin-film transistors. These results disprove the common belief that MFS structures serve as a good model system for ferroelectric polarization switching in thin-film transistors. cop. 2015 AIP Publishing LLC.
- Subjects :
- Materials science
Physics and Astronomy (miscellaneous)
HOL - Holst
02 engineering and technology
01 natural sciences
Ferroelectric capacitor
law.invention
law
Ferroelectric switching
0103 physical sciences
Semiconducting indium
010302 applied physics
Indium gallium zinc oxide
Indium gallium zinc oxides
TS - Technical Sciences
Industrial Innovation
business.industry
Transistor
Biasing
021001 nanoscience & nanotechnology
Ferroelectricity
Ferroelectric polarization
Capacitor
Semiconductor
Thin film devices
Thin-film transistor
Optoelectronics
Nano Technology
0210 nano-technology
business
Amorphous oxide semiconductor (AOS)
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Database :
- OpenAIRE
- Journal :
- Applied Physics Letters, 106:093503, 1-4. American Institute of Physics, Applied Physics Letters, 9, 106
- Accession number :
- edsair.doi.dedup.....d0c89c897c7dbfd4b77135c50f04e3cd