New Concept of Differential Effective Mobility in MOS Transistors

Authors :: Gerard Ghibaudo
K. Bennamane
Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC )
Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])
Source :: Active and Passive Electronic Components, Active and Passive Electronic Components, Hindawi Publishing Corporation, 2019, 2019, pp.5716230. ⟨10.1155/2019/5716230⟩, Active and Passive Electronic Components, Vol 2019 (2019)
Publication Year :: 2019
Publisher :: Hindawi Limited, 2019.
Abstract: International audience; A new concept of differential effective mobility is proposed. It characterizes the effective mobility of an increment of drain current resulting from a small increase of inversion charge in MOSFET channel. It allows us to show that the effective mobility can be described by a local electric field approach and not entirely by an effective electric field model.

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