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Homojunction silicon solar cells doping by ion implantation
- Source :
- Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2017, 409, pp.53-59. ⟨10.1016/j.nimb.2017.06.020⟩, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 2017, 409, pp.53-59. ⟨10.1016/j.nimb.2017.06.020⟩
- Publication Year :
- 2017
- Publisher :
- HAL CCSD, 2017.
-
Abstract
- International audience; Production costs and energy efficiency are the main priorities for the photovoltaic (PV) industry (COP21 conclusions). To lower costs and increase efficiency, we are proposing to reduce the number of processing steps involved in the manufacture of N-type Passivated Rear Totally Diffused (PERT) silicon solar cells. Replacing the conventional thermal diffusion doping steps by ion implantation followed by thermal annealing allows reducing the number of steps from 7 to 3 while maintaining similar efficiency. This alternative approach was investigated in the present work. Beamline and plasma immersion ion implantation (BLII and PIII) methods were used to insert n-(phosphorus) and p-type (boron) dopants into the Si substrate. With higher throughput and lower costs, PIII is a better candidate for the photovoltaic industry, compared to BL. However, the optimization of the plasma conditions is demanding and more complex than the beamline approach. Subsequent annealing was performed on selected samples to activate the dopants on both sides of the solar cell. Two annealing methods were investigated soak and spike thermal annealing. Best performing solar cells, showing a PV efficiency of about 20%, was obtained using spike annealing with adapted ion implantation conditions.
- Subjects :
- Nuclear and High Energy Physics
Materials science
Silicon
Annealing (metallurgy)
020209 energy
Analytical chemistry
chemistry.chemical_element
02 engineering and technology
7. Clean energy
Plasma Immersion
Beam Line
law.invention
[SPI]Engineering Sciences [physics]
law
Solar cell
0202 electrical engineering, electronic engineering, information engineering
Homojunction
Instrumentation
business.industry
Photovoltaic system
Doping
021001 nanoscience & nanotechnology
Plasma-immersion ion implantation
Ion implantation
chemistry
Optoelectronics
0210 nano-technology
business
Photovoltaic
Subjects
Details
- Language :
- English
- ISSN :
- 0168583X
- Database :
- OpenAIRE
- Journal :
- Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2017, 409, pp.53-59. ⟨10.1016/j.nimb.2017.06.020⟩, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 2017, 409, pp.53-59. ⟨10.1016/j.nimb.2017.06.020⟩
- Accession number :
- edsair.doi.dedup.....d29d0b103ed7c957abf1c36bfa450129