Role of H 3 + ions in deposition of silicon thin films from SiH 4 /H 2 discharges: modeling and experiments

Authors :: Monalisa Ghosh
Tinghui Zhang
Vincent Giovangigli
Tatiana Novikova
Pere Roca i Cabarrocas
Jean-Maxime Orlac’h
Laboratoire de physique des interfaces et des couches minces [Palaiseau] (LPICM)
École polytechnique (X)-Centre National de la Recherche Scientifique (CNRS)
Centre de Mathématiques Appliquées - Ecole Polytechnique (CMAP)
Source :: Plasma Sources Science and Technology, Plasma Sources Science and Technology, IOP Publishing, 2021, 30 (7), pp.075024. ⟨10.1088/1361-6595/ac0da2⟩
Publication Year :: 2021
Publisher :: HAL CCSD, 2021.
Abstract: International audience

Subjects :: 010302 applied physics
Materials science
Etching rate
02 engineering and technology
Silicon thin film
021001 nanoscience & nanotechnology
Condensed Matter Physics
01 natural sciences
Ion
Chemical engineering
0103 physical sciences
[INFO.INFO-BT]Computer Science [cs]/Biotechnology
0210 nano-technology
Deposition (chemistry)
ComputingMilieux_MISCELLANEOUS

Language :: English
ISSN :: 09630252 and 13616595
Database :: OpenAIRE
Journal :: Plasma Sources Science and Technology, Plasma Sources Science and Technology, IOP Publishing, 2021, 30 (7), pp.075024. ⟨10.1088/1361-6595/ac0da2⟩
Accession number :: edsair.doi.dedup.....d40d2d492456da189b46a6386bd5dba8

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