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Hysteresis Modulation on Van der Waals‐Based Ferroelectric Field‐Effect Transistor by Interfacial Passivation Technique and Its Application in Optic Neural Networks
- Source :
- Small. 16:2004371
- Publication Year :
- 2020
- Publisher :
- Wiley, 2020.
-
Abstract
- 2D semiconductor-based ferroelectric field effect transistors (FeFETs) have been considered as a promising artificial synaptic device for implementation of neuromorphic computing systems. However, an inevitable problem, interface traps at the 2D semiconductor/ferroelectric oxide interface, suppresses ferroelectric characteristics, and causes a critical degradation on the performance of 2D-based FeFETs. Here, hysteresis modulation method using self-assembly monolayer (SAM) material for interface trap passivation on 2D-based FeFET is presented. Through effectively passivation of interface traps by SAM layer, the hysteresis of the proposed device changes from interface traps-dependent to polarization-dependent direction. The reduction of interface trap density is clearly confirmed through the result of calculation using the subthreshold swing of the device. Furthermore, excellent optic-neural synaptic characteristics are successfully implemeted, including linear and symmetric potentiation and depression, and multilevel conductance. This work identifies the potential of passivation effect for 2D-based FeFETs to accelerate the development of neuromorphic computing systems.
- Subjects :
- Materials science
Transistors, Electronic
Passivation
02 engineering and technology
010402 general chemistry
01 natural sciences
Biomaterials
Monolayer
General Materials Science
business.industry
Oxides
General Chemistry
021001 nanoscience & nanotechnology
Ferroelectricity
0104 chemical sciences
Hysteresis
Semiconductor
Semiconductors
Neuromorphic engineering
Modulation
Optoelectronics
Field-effect transistor
Neural Networks, Computer
0210 nano-technology
business
Biotechnology
Subjects
Details
- ISSN :
- 16136829 and 16136810
- Volume :
- 16
- Database :
- OpenAIRE
- Journal :
- Small
- Accession number :
- edsair.doi.dedup.....d5a1da26ed7e2ea48eb1924f764cee73