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Reliability analysis on low temperature gate stack process steps for 3D sequential integration
- Source :
- 2017 S3S Proceedings, 2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), Oct 2017, Burlingame, United States. pp.24.2, ⟨10.1109/S3S.2017.8309219⟩
- Publication Year :
- 2017
- Publisher :
- IEEE, 2017.
-
Abstract
- session: Monolithic 3D 3; International audience; In this study we investigate the effect of some of the steps during a low temperature gate stack process flow, necessary for 3D sequential integration. These are: the nitridation of the high-k layer, the post nitridation annealing temperature and finally, the back end forming gas. Using Time Dependent Defect Spectroscopy, we could evaluate the impact of pre-existing traps on the quality of the gate stack (t 0 reliability) which shows no major differences between the splits, since they all have a low temperature dopant activation process. However, by applying Negative Bias Temperature Instability measurements, we observe that with the split of N 2 /H 2 nitridation, we have the best compromise of a small Equivalent Oxide Thickness and a low degradation. At the same time we see no difference at the stress impact between the two Post Nitridation Anneal temperatures. In that way we are able to move to lower temperatures. Finally, using the Deuterium as a back end forming gas we can have a set of guidelines, for some of the major process steps, to achieve high performance and low degradation, necessary for future scaling.
- Subjects :
- 010302 applied physics
reliability
Negative-bias temperature instability
Materials science
Annealing (metallurgy)
business.industry
gate stack
Nanowire
Gate stack
Equivalent oxide thickness
low temperature
Dopant Activation
01 natural sciences
nanowires
3D sequential integration
0103 physical sciences
Optoelectronics
process
[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
010306 general physics
Forming gas
business
Scaling
Subjects
Details
- Database :
- OpenAIRE
- Journal :
- 2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)
- Accession number :
- edsair.doi.dedup.....d5ded627d74b7326e50caba8f65cf3ec