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Measurement of w-InN/h-BN Heterojunction Band Offsets by X-Ray Photoemission Spectroscopy
- Source :
- Nanoscale Research Letters, Vol 5, Iss 8, Pp 1340-1343 (2010), Nanoscale Research Letters
- Publication Year :
- 2010
- Publisher :
- SpringerOpen, 2010.
-
Abstract
- X-ray photoelectron spectroscopy has been used to measure the valence band offset (VBO) of the w-InN/h-BN heterojunction. We find that it is a type-II heterojunction with the VBO being −0.30 ± 0.09 eV and the corresponding conduction band offset (CBO) being 4.99 ± 0.09 eV. The accurate determination of VBO and CBO is important for designing the w-InN/h-BN-based electronic devices.
- Subjects :
- X-ray photoelectron spectroscopy
Materials science
Indium nitride
Analytical chemistry
Nanochemistry
Band offset
chemistry.chemical_compound
Materials Science(all)
lcsh:TA401-492
Nanotechnology
General Materials Science
Spectroscopy
Chemistry/Food Science, general
X ray photoemission
w-InN/h-BN heterojunction
Nano Express
Material Science
Engineering, General
Materials Science, general
Heterojunction
Valence band offset
Condensed Matter Physics
Physics, General
chemistry
Valence band
Conduction band offset
Molecular Medicine
lcsh:Materials of engineering and construction. Mechanics of materials
Subjects
Details
- Language :
- English
- ISSN :
- 19317573
- Volume :
- 5
- Issue :
- 8
- Database :
- OpenAIRE
- Journal :
- Nanoscale Research Letters
- Accession number :
- edsair.doi.dedup.....d6c96eb992961da5fc6eba1a74fc55c9