Impact of BEOL stress on BiCMOS9MW HBTs

Authors :: Didier Celi
Pascal Chevalier
E. Canderle
Christophe Gaquiere
N. Derrier
G. Avenier
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN)
Centrale Lille-Institut supérieur de l'électronique et du numérique (ISEN)-Université de Valenciennes et du Hainaut-Cambrésis (UVHC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)
STMicroelectronics [Crolles] (ST-CROLLES)
Source :: Proceedings of 27th IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2013, 27th IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2013, 27th IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2013, 2013, Bordeaux, France. session 13 : Advanced SiGe BiCMOS Processes, paper 13.1, 223-226, ⟨10.1109/BCTM.2013.6798181⟩
Publication Year :: 2013
Publisher :: IEEE, 2013.
Abstract: Stress investigations have been carried out on SiGe HBTs from STMicroelectronics BiCMOS9MW technology. The strain created by the stack of metal connections impacts the base bandgap of the transistors: from the reference to the denser dummies structure, a 9.1 meV bandgap energy variation is pointed out. Dummies structures were embedded for both DC and HF characterizations which showed a 25% increase for the collector current, and a 21% and 12% increase for the transit frequencies fT and fMAX respectively.