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Gallium nitride approach for MEMS resonators with highly tunable piezo-amplified transducers
- Source :
- Proceedings of 24th International Conference on Micro Electro Mechanical Systems, MEMS 2011, 24th International Conference on Micro Electro Mechanical Systems, MEMS 2011, 24th International Conference on Micro Electro Mechanical Systems, MEMS 2011, 2011, Mexico. pp.581-584, ⟨10.1109/MEMSYS.2011.5734491⟩, 24th International Conference on Micro Electro Mechanical Systems, MEMS 2011, Jan 2011, Cancun, Mexico. pp.581-584, ⟨10.1109/MEMSYS.2011.5734491⟩
- Publication Year :
- 2011
- Publisher :
- IEEE, 2011.
-
Abstract
- International audience; The properties of a new class of electromechanical resonators based on GaN are presented. By using the two-dimensional electron gas (2-DEG) present at the AlGaN/GaN interface and the piezoelectric properties of this heterostructure, we use the R-HEMT (Resonant High Electron Mobility Transistor) as an active piezoelectric transducer up to 5MHz. In addition to the amplification effect of piezoelectric detection, we show that the active piezoelectric transduction has a strong dependence with the channel mobility that is controlled by a top gate. This allows to envision highly tunable sensors with co-integrated HEMT electronics.
- Subjects :
- Silicon
Micromechanical devices
Materials science
Optical resonators
Gallium nitride
02 engineering and technology
High-electron-mobility transistor
01 natural sciences
[SPI]Engineering Sciences [physics]
chemistry.chemical_compound
Resonator
0103 physical sciences
010302 applied physics
Microelectromechanical systems
HEMTs
business.industry
Nanogenerator
Wide-bandgap semiconductor
Logic gates
Aluminum gallium nitride
021001 nanoscience & nanotechnology
Piezoelectricity
chemistry
PMUT
Optoelectronics
0210 nano-technology
business
Subjects
Details
- Database :
- OpenAIRE
- Journal :
- 2011 IEEE 24th International Conference on Micro Electro Mechanical Systems
- Accession number :
- edsair.doi.dedup.....d81d24720f3b296eed51a55ab619442d